The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Apr. 19, 2016
Epistar Corporation, Hsinchu, TW;
Huga Optotech Inc., Taiching, TW;
Hsein-chin Chiu, Taichung, TW;
Chien-Kai Tung, Taichung, TW;
Heng-Kuang Lin, Taichung, TW;
Chih-Wei Yang, Taichung, TW;
Hsiang-Chun Wang, Taichung, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.