The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jul. 01, 2014
Applicant:
Joled Inc., Tokyo, JP;
Inventor:
Eiichi Satoh, Tokyo, JP;
Assignee:
JOLED INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/41 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/465 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02592 (2013.01); H01L 21/465 (2013.01); H01L 29/41 (2013.01); H01L 29/4908 (2013.01); H01L 29/78693 (2013.01); H01L 21/76801 (2013.01); H01L 21/76804 (2013.01); H01L 23/53233 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of manufacturing a thin-film transistor substrate that includes a thin-film transistor having a semiconductor layer, includes: forming a CuMn alloy film (third conductive film) above a substrate; forming a first silicon oxide film (first insulation film) on the CuMn alloy film at a first temperature; forming an aluminum oxide film (second insulation film) on the first silicon oxide film; and forming a second silicon oxide film (third insulation film) on the aluminum oxide film at a second temperature higher than the first temperature.