The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jul. 17, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyungbum Koo, Yongin-si, KR;

Wandon Kim, Yongin-si, KR;

Sangjin Hyun, Suwon-si, KR;

Shinhye Kim, Suwon-si, KR;

TaekSoo Jeon, Yongin-si, KR;

Byung-Suk Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02362 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate with an active pattern, a gate electrode provided at the active pattern, and a gate capping structure disposed above the gate electrode. The gate capping structure may include two or more gate capping patterns with different properties from each other, and the use of the gate capping structure makes it possible to form contact plugs in a self-aligned manner and improve operational speed and characteristics of the semiconductor device.


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