The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jun. 10, 2014
Samsung Electro-mechanics Co., Ltd., Suwon-Si, KR;
In Hyuk Song, Suwon-Si, KR;
Jae Hoon Park, Suwon-Si, KR;
Kee Ju Um, Suwon-Si, KR;
Dong Soo Seo, Suwon-Si, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-Si, KR;
Abstract
There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being of a second conductivity type; a well region formed above the second semiconductor regions and being of the second conductivity type; and a source region formed in the well region and being of the first conductivity type, wherein the second semiconductor regions include 1 to n layers formed from a lower portion of the device extending a in a direction of height of the device, and in the case that the widest width of the of the second semiconductor region of the nlayer is P, P<P(n≧2).