The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jun. 25, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11582 (2017.01); H01L 29/423 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 29/4234 (2013.01);
Abstract

A semiconductor memory device according to an embodiment, includes a stacked body, a semiconductor member, a charge storage layer, a charge block layer and an electrode antioxidant layer. The stacked body includes a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers. The semiconductor member extends in a stacking direction of the stacked body and penetrates the stacked body. The tunnel insulating layer is provided on a side surface of the semiconductor member. The charge storage layer is provided on a side surface of the tunnel insulating layer. The charge block layer is provided on a side surface of the charge storage layer and contains oxygen. The electrode antioxidant layer is provided between the charge block layer and the electrode layer and has a composition different from that of the electrode layer.


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