The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Feb. 04, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kenji Koshiishi, Yokohama, JP;

Junji Kataoka, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/11582 (2017.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes an interconnect layer, a stacked body, an insulating layer, a semiconductor pillar, a charge storage layer and a first conductive unit. The stacked body is separated from the interconnect layer in a first direction. The stacked body includes a memory unit and a selection gate provided between the memory unit and the interconnect layer. The insulating layer is provided between the interconnect layer and the stacked body. The semiconductor pillar pierces the stacked body in the first direction. The charge storage layer is provided between the semiconductor pillar and the memory unit. The first conductive unit connects the semiconductor pillar and the interconnect layer. A width of the first conductive unit along a second direction perpendicular to the first direction is wider than a width of the semiconductor pillar along the second direction.


Find Patent Forward Citations

Quick Actions:

Koshiishi, Kenji. (2017). Nonvolatile semiconductor memory device and method for manufacturing same (U.S. Patent No. 9627400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9627400

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…