The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jan. 21, 2016
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods to utilize efficient processes to form and use merged spacers in fin generation and the resulting devices are disclosed. Embodiments include providing mandrels separated from each other across two adjacent bit-cells on an upper surface of a dielectric layer on an upper surface of a silicon (Si) layer; forming first spacers on opposite sides of each mandrel; forming second spacers on exposed sides of the first spacers; removing the mandrels; removing exposed sections of the dielectric layer; removing the first and second spacers; forming fin-spacers on opposite sides of remaining sections of the dielectric layer; removing the remaining sections of the dielectric layer; removing exposed sections of the Si layer; and removing the fin-spacers to reveal Si fins.