The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jun. 04, 2015
Applicants:

Hee-woong Kang, Suwon-si, KR;

Suejin Kim, Gwangmyeong-si, KR;

Heewon Lee, Suwon-si, KR;

Inventors:

Hee-Woong Kang, Suwon-si, KR;

Suejin Kim, Gwangmyeong-si, KR;

Heewon Lee, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); H01L 27/108 (2006.01); G11C 11/56 (2006.01); G11C 29/52 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); G11C 16/04 (2006.01); G06F 11/10 (2006.01); G11C 29/42 (2006.01); G11C 29/04 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); G06F 11/1048 (2013.01); G11C 11/5635 (2013.01); G11C 11/5671 (2013.01); G11C 16/0466 (2013.01); G11C 29/52 (2013.01); H01L 23/528 (2013.01); H01L 27/10814 (2013.01); H01L 28/40 (2013.01); G11C 29/42 (2013.01); G11C 2029/0411 (2013.01); H01L 27/11582 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.


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