The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Dec. 01, 2015
Hyeonok Jung, Daejeon, KR;
Chan Ho Park, Incheon, KR;
Chan-sic Yoon, Anyang-si, KR;
Kiseok Lee, Busan, KR;
Wonwoo Lee, Yongin-si, KR;
Sunghee Han, Hwaseong-si, KR;
Hyeonok Jung, Daejeon, KR;
Chan Ho Park, Incheon, KR;
Chan-Sic Yoon, Anyang-si, KR;
Kiseok Lee, Busan, KR;
Wonwoo Lee, Yongin-si, KR;
Sunghee Han, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a semiconductor substrate including active portions including first and second dopant regions, word lines on the substrate and extending in a first direction to intersect the active portions, first and second bit lines on the substrate and extending in a second direction to intersect the word lines, and contact structures in regions between the word lines and between the first and second bit lines when viewed from a plan view. The first and second bit lines are connected to the first dopant regions. The contact structures are in contact with the second dopant regions, respectively. The contact structures each include a contact plug and a contact pad. The contact pads contact the second dopant regions. A separation distance between the contact plugs and the first bit lines is less than separation distance between the contact pads and the first bit lines.