The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
May. 19, 2014
Applicants:
Tae-joong Song, Seongnam-si, KR;
Jae-ho Park, Suwon-si, KR;
Kang-hyun Baek, Yongin-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 27/1108 (2013.01); H01L 27/1211 (2013.01); H01L 29/6681 (2013.01);
Abstract
A semiconductor device includes first and second memory cell regions adjacent to each other on a substrate. At least one active base and a shallow trench isolation may be sequentially laminated at a boundary between the first and second memory cell regions. First and second active fins are formed on respective sides of the shallow trench isolation, and the first and second active fins projecting from the active base. At least one deep trench isolation is formed on one side of the active base.