The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jun. 03, 2016
Applicant:

Nxp B.v., Eindhoven, NL;

Inventor:

Da-Wei Lai, Nijmegen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0292 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0262 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/735 (2013.01);
Abstract

An ESD protection device for shunting an electrostatic discharge current from a first node to a second node, and an integrated circuit including the same. The device includes a first bipolar transistor having a collector and an emitter located in a first n-type region. The emitter of the first transistor is connected to the first node. The device also includes a second bipolar transistor having a collector and an emitter located in a second n-type region. The emitter of the second transistor is connected to the collector of the first bipolar transistor. The device further includes a pn junction diode including a p-type region located in a third n-type region. The p-type region of the diode is connected to the collector of the second bipolar transistor and the third n-type region is connected to the second node.


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