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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627354 B1

PDFFull Text
Expired
Date of Patent:
Apr. 18, 2017

Filed:

Jun. 02, 2015

Semiconductor memory device

Applicant:

Noda Screen Co., Ltd., Aichi, JP;

Inventor:

Seisei Oyamada, Komaki, JP;

Assignee:

NODA SCREEN CO., LTD., Aichi, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

Cuong Q Nguyen

Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/66 (2006.01); H01G 4/33 (2006.01); H01G 4/12 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01G 4/40 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01G 4/1227 (2013.01); H01G 4/33 (2013.01); H01G 4/40 (2013.01); H01L 21/565 (2013.01); H01L 23/3735 (2013.01); H01L 23/66 (2013.01); H01L 24/49 (2013.01); H01L 24/85 (2013.01); H01L 2223/6611 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/14361 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19104 (2013.01); H01L 2924/19107 (2013.01);
Abstract

A semiconductor memory device includes a thin-film capacitor disposed at a position facing a circuit surface of a memory chip except for a center pad region. The thin-film capacitor includes a first plane electrode, a thin-film dielectric layer, and a second plane electrode. The first plane electrode includes a first power supply input portion to which a power supply voltage of one polarity is provided, and a first power supply output portion disposed near the center pad region to output the power supply voltage of one polarity to a center pad. The second plane electrode is formed on the dielectric layer and includes a second power supply input portion to which the power supply voltage of the other polarity is provided, and a second power supply output portion disposed near the center pad region to apply the power supply voltage of the other polarity to the center pad.

Find Patent Forward Citations

Oyamada, Seisei. (2017). Semiconductor memory device (U.S. Patent No. 9627354). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9627354

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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