The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Dec. 04, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Yasunari Hino, Tokyo, JP;
Daisuke Kawabata, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/27 (2013.01); H01L 2224/2711 (2013.01); H01L 2224/27505 (2013.01); H01L 2224/2969 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32054 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.