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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627342 B1

PDFFull Text
Date of Patent:
Apr. 18, 2017

Filed:

Sep. 06, 2013

Electronic component and method of manufacturing electronic component

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Takashi Saito, Nagano, JP;

Tatsuo Nishizawa, Matsumoto, JP;

Yoshito Kinoshita, Nagano, JP;

Norihiro Nashida, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

John M Parker

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); C25D 5/12 (2006.01); C23C 18/16 (2006.01); C23C 28/02 (2006.01); C23C 18/36 (2006.01); C23C 18/54 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); C23C 18/165 (2013.01); C23C 18/1651 (2013.01); C23C 18/1653 (2013.01); C23C 28/02 (2013.01); C23C 28/022 (2013.01); C23C 28/023 (2013.01); C25D 5/12 (2013.01); H01L 24/05 (2013.01); H01L 24/27 (2013.01); H01L 24/33 (2013.01); H01L 24/84 (2013.01); C23C 18/36 (2013.01); C23C 18/54 (2013.01); H01L 24/32 (2013.01); H01L 24/40 (2013.01); H01L 2224/29 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/40091 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/8484 (2013.01); H01L 2224/84203 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/351 (2013.01);
Abstract

Plating pre-processing is carried out before carrying out a plating process on the surface of a conducting section provided on a semiconductor wafer. A first metal film is formed on the surface of the conducting section by NiP alloy plating process. A second metal film is formed on the surface of the first metal film by immersion Ag plating process. The semiconductor wafer is diced and cut into semiconductor chips. A conductive composition containing Ag particles is applied to the surface of the second metal film which is on the front surface of the semiconductor chip. A bonding layer containing Ag particles is formed by sintering the conductive composition through heating. A metal plate is then bonded to the surface of the second metal film via the bonding layer containing Ag particles. The electronic component has high bonding strength, excellent thermal resistance and heat radiation properties.

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