The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jan. 10, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Keitaro Ichikawa, Tokyo, JP;

Taketoshi Shikano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H05K 7/18 (2006.01); H01L 21/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49568 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49503 (2013.01); H01L 23/49531 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An object is to provide a technique in which a cost reduction in a power semiconductor device can be achieved while maintaining heat dissipation performance as much as possible. A power semiconductor device includes a leadframe, a power semiconductor element disposed on an upper surface of the leadframe, and an insulating layer disposed on a lower surface of the leadframe. At least a partial line of a peripheral line of a region where the insulating layer is disposed, on the lower surface, is aligned, in top view, with at least a partial line of an expanded peripheral line obtained by shifting outwardly, by the amount corresponding to the thickness of the leadframe, the peripheral line of the region where the power semiconductor element is disposed, on the upper surface.


Find Patent Forward Citations

Loading…