The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Apr. 24, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Rei Yoneyama, Tokyo, JP;
Kozo Harada, Tokyo, JP;
Isao Oshima, Tokyo, JP;
Yoshitaka Otsubo, Tokyo, JP;
Rena Kawahara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
In a conventional semiconductor device, a pattern serving as a heat dissipating material is formed by applying a phase transition material. Provided is a semiconductor device that can reduce collapse of a pattern shape even if a shock is applied to the pattern formed with the phase transition material that is liquefied when the environmental temperature is not sufficiently controlled. The semiconductor device includes semiconductor elements mounted inside a semiconductor module (); a heat radiating surface (), formed in the semiconductor module (), dissipating heat generated in the semiconductor elements to a heat radiator; a pattern () formed on the heat radiating surface and made from a phase transition material; and a film () serving as a first film that covers the pattern ().