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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627253 B1

PDFFull Text
Date of Patent:
Apr. 18, 2017

Filed:

Apr. 29, 2016

Semiconductor device including air gaps and method of fabricating the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Min-Ho Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Regan J Rundio

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/764 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01); H01L 27/108 (2006.01); H01L 27/24 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/764 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/2436 (2013.01); H01L 29/4236 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 27/1085 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device including air gaps and a method of fabricating the same. The semiconductor device in accordance with an embodiment may include a bit line structure having a bit line formed over a first contact plug, a second contact plug formed adjacent to the first contact plug and the bit line structure, an air gap structure comprising two or more air gaps to surround the second contact plug and have an outer sidewall in contact with the bit line structure, and one or more capping support layers separating the air gaps, a third contact plug capping a part of the air gap structure and being formed over the second contact plug, and a capping layer for capping a remainder of the air gap structure.

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