The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jun. 11, 2015
Sunguk Jang, Seoul, KR;
Juyeon Kim, Seoul, KR;
Hosung Son, Hwaseong-si, KR;
Dongsuk Shin, Yongin-si, KR;
Jeongmin Lee, Suwon-si, KR;
Sunguk Jang, Seoul, KR;
Juyeon Kim, Seoul, KR;
Hosung Son, Hwaseong-si, KR;
Dongsuk Shin, Yongin-si, KR;
Jeongmin Lee, Suwon-si, KR;
Abstract
Methods of forming a semiconductor device are provided. An active region is formed on a substrate. A temporary gate crossing the active region and a capping pattern covering the temporary gate are formed. Spacers are formed on sidewalls of the temporary gate. A growth-blocking layer is locally formed in an upper edge of the temporary gate. A source/drain region is formed on the active region adjacent to the temporary gate. The capping pattern, the first growth-blocking layer, and the temporary gate are removed to expose the active region. A gate electrode is formed on the exposed active region.