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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627204 B1

PDFFull Text
Date of Patent:
Apr. 18, 2017

Filed:

Jun. 17, 2014

Composition for forming a coating type bpsg film, substrate formed a film by said composition, and patterning process using said composition

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsutomu Ogihara, Jyoetsu, JP;

Takafumi Ueda, Jyoetsu, JP;

Yoshinori Taneda, Jyoetsu, JP;

Seiichiro Tachibana, Jyoetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); G03F 7/038 (2006.01); G03F 7/004 (2006.01); G03F 7/075 (2006.01); G03F 7/11 (2006.01); H01L 21/02 (2006.01); G03F 7/40 (2006.01); G03F 7/039 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); G03F 7/0042 (2013.01); G03F 7/0397 (2013.01); G03F 7/0751 (2013.01); G03F 7/0752 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); H01L 21/02129 (2013.01); H01L 21/02282 (2013.01); G03F 7/0035 (2013.01);
Abstract

The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

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