The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Dec. 12, 2014
University of Maryland, College Park, College Park, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
The United States of America, As Represented BY the Secretary of Commerce, Washington, DC (US);
Abhishek Motayed, Rockville, MD (US);
Sergiy Krylyuk, Gaithersburg, MD (US);
Albert V. Davydov, North Potomac, MD (US);
Matthew King, Linthicum, MD (US);
Jong-Yoon Ha, Gaithersburg, MD (US);
University of Maryland, College Park, College Park, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
The United States of America, as represented by the Secretary of Commerce, National Institute of Standards and Technology, Washington, DC (US);
Abstract
Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.