The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Sep. 29, 2014
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Inventors:
Assignees:
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 27/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 27/024 (2013.01); H01J 37/3171 (2013.01); H01J 2237/0206 (2013.01); H01J 2237/065 (2013.01);
Abstract
An electrode for use in an ion implantation system includes a body portion and a penetration portion. The penetration portion includes penetration holes which are closely and regularly arranged. The penetration holes have the shape of a circle or a regular polygon with at least four sides. The electrode has an increased aperture ratio which, in turn, increases the density of the ion beam, thereby improving the efficiency of the ion implantation process.