The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Mar. 02, 2015
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Kenneth Louie, Sunnyvale, CA (US);
Man Mui, Fremont, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 7/14 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 7/14 (2013.01); G11C 11/5671 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/32 (2013.01); G11C 16/3418 (2013.01); G11C 16/3427 (2013.01); G11C 16/3459 (2013.01);
Abstract
Techniques are presented for the programming of a non-volatile memory in which multi-state memory cells use a charge trapping layer. When writing data onto a word lines, different data states are written individually, while programming inhibiting the other states, thereby breaking down the write operation into a number of sub-operations, one for each state to be written. This allows for improved timing and decreased power consumption.