The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Jan. 29, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Chulmin Jung, San Diego, CA (US);

Fahad Ahmed, San Diego, CA (US);

Sei Seung Yoon, San Diego, CA (US);

Keejong Kim, Phoenix, AZ (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/419 (2006.01); G11C 5/14 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/147 (2013.01); G11C 11/4074 (2013.01);
Abstract

A memory and a method to operate the memory are provided. The memory includes a plurality of memory cells and a wordline driver configured to output a wordline. The memory cells are coupled to the wordline. A control circuit is configured to supply an operating voltage to the memory cells and to the wordline driver. A voltage-adjustment circuit is configured to adjust the operating voltage supplied to the memory cells during the control circuit supplying the operating voltage to the memory cells and to the wordline driver. The method includes supplying an operating voltage to at least one memory cells and to a wordline coupled to the at least one memory cells and adjusting the operating voltage supplied to the at least one memory cells during the supplying the operating voltage to the at least one memory cells and to the wordline.


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