The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Oct. 09, 2012
Nvidia Corporation, Santa Clara, CA (US);
John W. Poulton, Chapel Hill, NC (US);
Brian Zimmer, Berkeley, CA (US);
NVIDIA Corporation, Santa Clara, CA (US);
Abstract
An 8-transistor SRAM (static random access memory) storage cell provides differential read bit lines that are precharged to a low voltage level for read operations. The 8-transistor storage cell provides separate ports for read and write operations, including differential read bit lines. Prior to each read operation, the differential read bit lines are precharged to the low voltage level. During read operations, one of the two differential read bit lines is pulled high towards a high voltage level while the complementary bit line remains at the low voltage level resulting from the precharge. The difference in voltage between the differential read bit lines is sensed to determine the value stored in each 8-transistor SRAM storage cell and complete the read operation.