The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
May. 26, 2016
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Ho Uk Song, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/14 (2006.01); G11C 7/08 (2006.01); G11C 5/14 (2006.01); G11C 11/4099 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 5/147 (2013.01); G11C 7/08 (2013.01); G11C 7/14 (2013.01); G11C 11/4074 (2013.01); G11C 11/4099 (2013.01);
Abstract
A semiconductor device may be provided. The semiconductor device may include a reference mat including a reference bit line and a reference word line, the reference mat, located adjacent to a normal mat, and the reference mat configured such that a capacitance of the reference bit line is adjusted based on a signal of the reference word line. The semiconductor device may include a drive controller configured to drive the signal of the reference word line with a drive voltage based on a boosting voltage, the drive voltage having a lower voltage level than the boosting voltage.