The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Feb. 25, 2014
Applicant:

Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., München, DE;

Inventors:

Daniela Collin, Werneck, DE;

Gerhard Domann, Höchberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01); G03F 7/16 (2006.01); C07F 7/18 (2006.01); C08G 77/28 (2006.01); C08G 77/48 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0757 (2013.01); C07F 7/1804 (2013.01); C07F 7/1836 (2013.01); C08G 77/28 (2013.01); C08G 77/48 (2013.01); G03F 7/0045 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01);
Abstract

The present invention relates to a special heteropolymer, namely a silicic acid (hetero)poly(co)condensate with positive-resist behavior which is distinguished by polycondensation or copolycondensation of specially modified silanes. The invention relates likewise to monomeric silanes from which the corresponding heteropolymers, i.e. the silicic acid (hetero)poly(co)condensates, can be produced. The silicic acid (hetero)poly(co)condensates according to the invention can be used for a photoresist which has positive-resist behavior. In addition, the invention relates to corresponding methods both for the production of the silanes, the silicic acid (hetero)poly(co)condensates or a method for photochemical structuring of the photoresist according to the invention which is based on the silicic acid (hetero)poly(co)condensates.


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