The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Dec. 06, 2012
University of North Texas, Denton, TX (US);
Jeffry A. Kelber, Denton, TX (US);
UNIVERSITY OF NORTH TEXAS, Denton, TX (US);
Abstract
Direct growth of graphene on CoO(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic spcarbon lineshape, at average carbon coverages from 0.4-3 monolayers. Low energy electron diffraction (LEED) indicates (111) ordering of the spcarbon film with a lattice constant of 2.5 (±0.1) Å characteristic of graphene. Six-fold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 monolayers. The LEED data also indicate an average domain size of ˜1800 Å, and show an incommensurate interface with the CoO(111) substrate, where the latter exhibits a lattice constant of 2.8 (±0.1) Å. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected lr to lr* satellite feature, but with a binding energy for the three monolayer film of 284.9 (±0.1) eV, indicative of substantial graphene-to-oxide charge transfer.