The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

May. 17, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Ryo Kanda, Tokyo, JP;

Koichi Yamazaki, Tokyo, JP;

Hiroshi Kuroiwa, Tokyo, JP;

Masatoshi Maeda, Tokyo, JP;

Tetsu Toda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/082 (2006.01); H03K 3/356 (2006.01); H03K 5/01 (2006.01); H03K 5/24 (2006.01); H03K 17/567 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H03K 3/356 (2013.01); H03K 5/01 (2013.01); H03K 5/24 (2013.01); H03K 17/567 (2013.01); H01L 23/528 (2013.01); H01L 24/49 (2013.01);
Abstract

A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been deteLutined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.


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