The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Aug. 28, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventor:
Toshiyuki Naka, Nonoichi Ishikawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01); H02M 3/155 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H02M 3/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H03K 2017/6875 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes: a first switching element comprising a heterojunction comprising a first compound semiconductor layer and a second compound semiconductor layer; and a driver which applies a voltage to a gate of the first switching element to control turn-on and turn-off of the first switching element. The driver temporarily increases a gate voltage of the first switching element at a timing when the first switching element is turned on, during a period while the first switching element is on.