The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Jan. 10, 2014
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

Dean Fernando, Torrance, CA (US);

Roel Barbosa, Sta. Rosa Laguna, PH;

Toshio Takahashi, Rancho Palos Verdes, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/5387 (2007.01); H02H 7/122 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H02H 7/122 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H02M 7/5387 (2013.01); H01L 23/3107 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30111 (2013.01);
Abstract

According to an exemplary implementation, a semiconductor package includes a multi-phase power inverter having power switches and situated on a leadframe of the semiconductor package. The semiconductor package further includes an over-temperature protection circuit configured to reduce current through the power switches based on multiple temperature threshold values of the power switches and a sensed temperature of the power switches. The over-temperature protection circuit can be configured to enter first and second modes based on the multiple temperature threshold values and the sensed temperature, where the second mode reduces current through the power switches to a greater extent than the first mode.


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