The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Sep. 24, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
PANASONIC COPRORATION, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/05 (2006.01); H01L 29/51 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5203 (2013.01); H01L 27/3274 (2013.01); H01L 29/511 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 51/052 (2013.01); H01L 51/0516 (2013.01); H01L 51/0537 (2013.01); H01L 27/3262 (2013.01); H01L 29/512 (2013.01); H01L 51/055 (2013.01); H01L 51/0525 (2013.01); H01L 51/0545 (2013.01);
Abstract
A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.