The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Mar. 24, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Tobias Meyer, Ihrlerstein, DE;

Christian Leirer, Friedberg, DE;

Lorenzo Zini, Regensburg, DE;

Jürgen Off, Regensburg, DE;

Andreas Löffler, Neutraubling, DE;

Adam Bauer, Donaustauf, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/025 (2013.01); H01L 33/0008 (2013.01); H01L 33/14 (2013.01); H01L 27/15 (2013.01); H01L 33/005 (2013.01); H01L 33/382 (2013.01);
Abstract

An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.


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