The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
May. 15, 2013
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Hiroshi Nakatsu, Osaka, JP;
Tomoya Inoue, Osaka, JP;
Kentaro Nonaka, Osaka, JP;
Toshiaki Asai, Osaka, JP;
Tadashi Takeoka, Osaka, JP;
Yoshihiko Tani, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka-shi, JP;
Abstract
A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ω (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ω (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.