The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Jun. 16, 2016
Applicant:

The United States of America As Represented BY the Secretary of the Army, Washington, DC (US);

Inventors:

Stephen F. Bartolucci, Waterford, NY (US);

Daniel B. Kaplan, Rockaway, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 21/02568 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01);
Abstract

Processes for controlling the growth and thickness of two-dimensional transition metal dichalcogenides are provided. The process modifies an insulator substrate surface with an electron or ion beam to create charged areas on the substrate surface. The treated surface allows for hydroxylation of the charged species which serves as nucleation sites for the seed particles during chemical vapor deposition that promotes growth of thin layers of transition metal dichalcogenides.


Find Patent Forward Citations

Loading…