The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Dec. 04, 2013
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Inventors:
Assignees:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/78669 (2013.01);
Abstract
A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.