The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Aug. 31, 2016
University of Electronic Science and Technology of China, Chengdu, CN;
Xiaorong Luo, Chengdu, CN;
Weiwei Ge, Chengdu, CN;
Junfeng Wu, Chengdu, CN;
Da Ma, Chengdu, CN;
Mengshan Lv, Chengdu, CN;
Linhua Huang, Chengdu, CN;
Qing Liu, Chengdu, CN;
Tao Sun, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
A tri-gate laterally-diffused metal oxide semiconductor (LDMOS), including a substrate, a P-type semiconductor region, a P-type contact region, an N-type source region, a gate dielectric layer, an N-type drift region, a first isolation dielectric layer, an N-type drain region, and a second isolation dielectric layer. The P-type semiconductor region is disposed on one end of an upper surface of the substrate, and the N-type drift region is disposed on another end of the upper surface. The P-type semiconductor region contacts with the N-type drift region. The P-type contact region and the N-type source region are disposed on one side of the P-type semiconductor region which is away from the N-type drift region, and compared with the P-type contact region, the N-type source region is in the vicinity of the N-type drift region.