The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Mar. 16, 2016
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Madhur Bobde, San Jose, CA (US);
Jun Hu, San Bruno, CA (US);
Lingpeng Guan, Sunnyvale, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Lei Zhang, Shanghai, CN;
Jongoh Kim, Suwon, KR;
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type. A semiconductive first buffer layer of the first conductivity type formed above the substrate. A doping concentration of the first buffer layer is greater than a doping concentration of the substrate. A second buffer layer of the second conductivity type formed above the first buffer layer. An epitaxial layer of the second conductivity type formed above the second buffer layer. One or more heavily doped regions of the second conductivity type are formed through portions of the first buffer layer from the second buffer layer and into corresponding portions of the substrate. This abstract is provided with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.