The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

May. 16, 2014
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Noriaki Murakami, Kiyosu, JP;

Toru Oka, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/45 (2006.01); H01L 33/38 (2010.01); H01L 21/24 (2006.01); H01L 33/36 (2010.01); H01L 21/285 (2006.01); H01L 29/10 (2006.01); H01L 21/441 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/244 (2013.01); H01L 21/28575 (2013.01); H01L 33/36 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 21/441 (2013.01); H01L 28/60 (2013.01); H01L 29/10 (2013.01); H01L 2224/05166 (2013.01); H01L 2933/0016 (2013.01);
Abstract

An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of copper.


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