The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
May. 12, 2015
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventors:
Masaya Kadono, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Yukio Yamauchi, Shizuoka, JP;
Hidehito Kitakado, Hyogo, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 51/52 (2006.01); H01L 23/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3258 (2013.01); H01L 27/127 (2013.01); H01L 27/1214 (2013.01); H01L 27/1222 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01L 29/78621 (2013.01); H01L 51/5253 (2013.01); H01L 51/5259 (2013.01); H01L 23/10 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.