The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Feb. 09, 2016
SK Hynix Inc., Gyeonggi-do, KR;
Yun-Hui Yang, Gyeonggi-do, KR;
Pyong-Su Kwag, Gyeonggi-do, KR;
Young-Jun Kwon, Gyeonggi-do, KR;
Min-Ki Na, Gyeonggi-do, KR;
Sung-Kun Park, Gyeonggi-do, KR;
Donghyun Woo, Gyeonggi-do, KR;
Cha-Young Lee, Gyeonggi-do, KR;
Ho-Ryeong Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.