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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9620532 B1

PDFFull Text
Date of Patent:
Apr. 11, 2017

Filed:

May. 08, 2013

Manufacturing method of transistor with floating gate and application method of transistor with floating gate electrode

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ning Chen, Beijing, CN;

Wei Guo, Beijing, CN;

Lu Wang, Beijing, CN;

Assignee:

BOE Technology Group Co., Ltd., Beijing, CN;

Attorney:

Collard & Roe, P.C.

Primary Examiner:

Thomas L Dickey

Assistant Examiner:

Damon Hillman

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 21/28 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); G02F 1/133 (2006.01); G09G 3/20 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); G02F 1/13306 (2013.01); G09G 3/2092 (2013.01); H01L 21/0228 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02667 (2013.01); H01L 21/2658 (2013.01); H01L 21/26513 (2013.01); H01L 21/28273 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 27/1222 (2013.01); H01L 27/1237 (2013.01); H01L 27/1262 (2013.01); H01L 27/1274 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/4175 (2013.01); H01L 29/41733 (2013.01); H01L 29/42324 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66757 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/78675 (2013.01); G09G 2310/0248 (2013.01); G09G 2310/08 (2013.01); G09G 2320/045 (2013.01);
Abstract

Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (), and a floating gate electrode (), a source electrode (), a drain electrode () and a control gate electrode () disposed on the substrate (). The transistor with floating gate electrode further comprises a first insulating film () and a polysilicon film () that are sequentially disposed on the substrate (), and a channel region () is formed in the polysilicon film () at a position corresponding to the floating gate electrode ().

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