The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Feb. 12, 2014
Chan-hee Jeon, Hwaseong-si, KR;
Eun-kyoung Kwon, Suwon-si, KR;
Il-ryong Kim, Hwaseong-si, KR;
Han-gu Kim, Seongnam-si, KR;
Woo-jin Seo, Hwaseong-si, KR;
Ki-tae Lee, Seongnam-si, KR;
Chan-Hee Jeon, Hwaseong-si, KR;
Eun-Kyoung Kwon, Suwon-si, KR;
Il-Ryong Kim, Hwaseong-si, KR;
Han-Gu Kim, Seongnam-si, KR;
Woo-Jin Seo, Hwaseong-si, KR;
Ki-Tae Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.