IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9620444 B1

PDFFull Text
Date of Patent:
Apr. 11, 2017

Filed:

Sep. 07, 2012

Power semiconductor device

Applicants:

Tatsuya Fukase, Tokyo, JP;

Dai Nakajima, Tokyo, JP;

Masahiko Fujita, Tokyo, JP;

Masaki Kato, Tokyo, JP;

Inventors:

Tatsuya Fukase, Tokyo, JP;

Dai Nakajima, Tokyo, JP;

Masahiko Fujita, Tokyo, JP;

Masaki Kato, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorneys:

Sughrue Mion, PLLC

Richard C. Turner

Primary Examiner:

Binh Tran

Int. Cl.
CPC ...
H01G 4/228 (2006.01); H01L 23/495 (2006.01); H05K 1/18 (2006.01); H01L 23/31 (2006.01); H01L 23/492 (2006.01); H01L 23/00 (2006.01); H05K 3/10 (2006.01); H01G 9/00 (2006.01); H01G 4/005 (2006.01); H01G 4/012 (2006.01); H01G 4/236 (2006.01); H01G 2/20 (2006.01); H05K 3/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49589 (2013.01); H01L 23/3107 (2013.01); H01L 23/492 (2013.01); H01L 23/4952 (2013.01); H01L 23/49531 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/562 (2013.01); H05K 1/186 (2013.01); H05K 3/103 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/85399 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/30107 (2013.01); H05K 3/202 (2013.01); H05K 2201/09118 (2013.01); H05K 2201/10015 (2013.01); H05K 2201/10166 (2013.01); H05K 2201/10636 (2013.01); H05K 2201/10962 (2013.01); Y02P 70/611 (2015.11);
Abstract

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Find Patent Forward Citations

Loading…