The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Jun. 10, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shinichi Nakao, Yokkaichi, JP;
Shunsuke Ochiai, Yokkaichi, JP;
Yusuke Oshiki, Kuwana, JP;
Kei Watanabe, Yokkaichi, JP;
Mitsuhiro Omura, Kuwana, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains at least one type of a metal, boron, and carbon. The metal is selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium. A composition ratio of the metal is higher than a composition ratio of the boron and a composition ratio of the carbon. The method includes making a hole or a slit in the layer to be etched by performing a dry etching to the layer to be etched using the mask layer being patterned.