The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Jul. 11, 2014
Applicant:
Portland State University, Portland, OR (US);
Inventors:
Shankar B. Rananavare, Hillsboro, OR (US);
Moshood Kayode Morakinyo, Portland, OR (US);
Assignee:
Portland State University, Portland, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); C03C 15/00 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C03C 15/00 (2013.01); C23F 1/00 (2013.01); H01L 21/0273 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01);
Abstract
Sub-50-nm structures are formed using sequential top-down and bottom up lithographies in conjunction with selective etching. The preferred rendition of the method involves: (a) rough lithographic patterning, (b) size/shape selected nanostructure deposition, (c) resist reflow around the nanostructures, and (d) selective removal/etching of the nanostructure.