The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Jan. 20, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Byoung-Kwon Choo, Yongin, KR;

Sang-Hoon Ahn, Yongin, KR;

Byoung-Ho Cheong, Yongin, KR;

Joo-Woan Cho, Yongin, KR;

Hyun-Jin Cho, Yongin, KR;

Soo-Yeon Han, Yongin, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02683 (2013.01); H01L 21/02532 (2013.01); H01L 21/02686 (2013.01); H01L 21/02691 (2013.01); H01L 27/14698 (2013.01);
Abstract

An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.


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