The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Jun. 23, 2014
Insulating material, passive element, circuit board, and method of manufacturing an insulating sheet
Applicants:
Nippon Mektron, Ltd., Tokyo, JP;
Osaka University, Suita-shi, Osaka, JP;
Inventors:
Masaya Nogi, Suita, JP;
Katsuaki Suganuma, Suita, JP;
Hirotaka Koga, Suita, JP;
Natsuki Komoda, Suita, JP;
Hirofumi Matsumoto, Tokyo, JP;
Masayuki Iwase, Tokyo, JP;
Kazuyuki Ozaki, Tokyo, JP;
Keizo Toyama, Tokyo, JP;
Assignees:
NIPPON MEKTRON, LTD., Tokyo, JP;
OSAKA UNIVERSITY, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/16 (2006.01); H05K 1/09 (2006.01); H05K 1/00 (2006.01); H05K 1/16 (2006.01); D21H 21/14 (2006.01); D21H 11/10 (2006.01); H01G 4/20 (2006.01); H05K 3/46 (2006.01); H05K 1/03 (2006.01); H05K 1/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/16 (2013.01); D21H 11/10 (2013.01); D21H 21/14 (2013.01); H01G 4/203 (2013.01); H05K 1/0386 (2013.01); H05K 1/162 (2013.01); H05K 3/4602 (2013.01); H05K 1/02 (2013.01); H05K 3/4614 (2013.01); H05K 2201/026 (2013.01); H05K 2201/09672 (2013.01); H05K 2203/178 (2013.01); Y10T 428/249921 (2015.04);
Abstract
Disclosed are an insulating material (high-k layer) which includes a fiber assembly mainly composed of a cellulose nanofiber, and an electroconductive metal material supported by the fiber assembly; and a passive element (capacitor) which includes a high-k layer which is composed of the insulating material, and an electroconductive part stacked on the high-k layer.