The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Sep. 09, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Haiyang Peng, Kanagawa, JP;

Koichiro Zaitsu, Kanagawa, JP;

Shinichi Yasuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/36 (2006.01); G11C 13/00 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 17/165 (2013.01); G11C 17/18 (2013.01); G11C 29/787 (2013.01); G11C 2213/15 (2013.01); G11C 2213/77 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.


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