The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Feb. 20, 2015
Applicant:

Hgst Netherlands B.v., Amsterdam, NL;

Inventors:

Robert Mateescu, San Jose, CA (US);

Zvonimir Z. Bandic, San Jose, CA (US);

Yongjune Kim, Pittsburgh, PA (US);

Seung-Hwan Song, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); H03M 13/11 (2006.01); H03M 13/00 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1008 (2013.01); H03M 13/1105 (2013.01); H03M 13/611 (2013.01);
Abstract

Techniques for encoding data for non-volatile memory storage systems are disclosed. In one particular embodiment, the techniques may be realized as a method including determining whether the memory includes a defective memory cell, receiving a message to be written to the memory, sub-dividing the message into a plurality of sub-messages, generating a first error correction code for the sub-messages, the first error correction code being a first type, generating a plurality of second error correction codes for the sub-messages, the second error correction codes being a second type different from the first type, generating a combined message comprising the sub-messages, the first error correction code, and the plurality of second error correction codes, and writing the combined message to the memory, at least a portion of the combined message being written to the defective memory cell.


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