The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Dec. 23, 2013
Applicant:

Nippon Shokubai Co., Ltd., Osaka, JP;

Inventors:

Shin-ya Imoto, Osaka, JP;

Takashi Abe, Osaka, JP;

Morihiro Kitamura, Osaka, JP;

Hikaru Takahashi, Osaka, JP;

Takehiko Morita, Osaka, JP;

Tatsuhiko Akiyama, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/04 (2006.01); B01D 53/46 (2006.01); B01D 53/86 (2006.01); B01D 53/72 (2006.01); B01D 53/82 (2006.01);
U.S. Cl.
CPC ...
C01B 33/04 (2013.01); B01D 53/46 (2013.01); B01D 53/8671 (2013.01); C01B 33/046 (2013.01); B01D 53/72 (2013.01); B01D 53/82 (2013.01); B01D 2257/556 (2013.01);
Abstract

High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.


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